microelec_SEY/src/MicroElecPhysics.cc

0001 //
0002 // ********************************************************************
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0024 // ********************************************************************
0025 //
0026 // -------------------------------------------------------------------
0027 // -------------------------------------------------------------------
0028
0029 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo....
0030
0031 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo....
0032
0033 #include "MicroElecPhysics.hh"
0034 #include "G4SystemOfUnits.hh"
0035
0036
0037 // Geant4-MicroElec MODELS
0038
0039 #include "G4MicroElecElastic.hh"
0040 #include "G4MicroElecElasticModel_new.hh"
0041
0042 #include "G4MicroElecInelastic.hh"
0043 #include "G4MicroElecInelasticModel_new.hh"
0044
0045 #include "G4MicroElecLOPhononScattering.hh"
0046 #include "G4MicroElecLOPhononModel.hh"
0047 #include "G4MicroElecSurface.hh"
0048
0049 //
0050
0051 #include "G4LossTableManager.hh"
0052 #include "G4EmConfigurator.hh"
0053 #include "G4VEmModel.hh"
0054 #include "G4DummyModel.hh"
0055 #include "G4eIonisation.hh"
0056 #include "G4hIonisation.hh"
0057 #include "G4ionIonisation.hh"
0058 #include "G4eMultipleScattering.hh"
0059 #include "G4hMultipleScattering.hh"
0060 #include "G4BraggModel.hh"
0061 #include "G4BraggIonModel.hh"
0062 #include "G4BetheBlochModel.hh"
0063 #include "G4UrbanMscModel.hh"
0064 #include "G4MollerBhabhaModel.hh"
0065 #include "G4IonFluctuations.hh"
0066 #include "G4UniversalFluctuation.hh"
0067
0068 #include "G4MicroElecCapture.hh"
0069
0070 #include "G4UAtomicDeexcitation.hh"
0071
0072
0073
0074 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo....
0075
0076 MicroElecPhysics::MicroElecPhysics():  G4VUserPhysicsList()
0077 {
0078   defaultCutValue = 1*micrometer;
0079   cutForGamma     = defaultCutValue;
0080   cutForElectron  = defaultCutValue;
0081   cutForPositron  = defaultCutValue;
0082   cutForProton    = defaultCutValue;
0083
0084   SetVerboseLevel(1);
0085 }
0086
0087 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo....
0088
0089 MicroElecPhysics::~MicroElecPhysics()
0090 {}
0091
0092 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo....
0093
0094 void MicroElecPhysics::ConstructParticle()
0095 {
0096   ConstructBosons();
0097   ConstructLeptons();
0098   ConstructBarions();
0099 }
0100
0101 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo....
0102
0103 void MicroElecPhysics::ConstructBosons()
0104 {
0105   // gamma
0106   G4Gamma::GammaDefinition();
0107 }
0108  //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo....
0109
0110 void MicroElecPhysics::ConstructLeptons()
0111 {
0112   // leptons
0113   G4Electron::ElectronDefinition();
0114   G4Positron::PositronDefinition();
0115 }
0116
0117 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo....
0118
0119 void MicroElecPhysics::ConstructBarions()
0120 {
0121   //  baryons
0122   G4Proton::ProtonDefinition();
0123   G4GenericIon::GenericIonDefinition();
0124 }
0125
0126 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo....
0127
0128 void MicroElecPhysics::ConstructProcess()
0129 {
0130   AddTransportation();
0131   ConstructEM();
0132   ConstructGeneral();
0133 }
0134
0135 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo....
0136
0137
0138 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo....
0139
0140 void MicroElecPhysics::ConstructEM()
0141 {
0142
0143   G4EmParameters* param = G4EmParameters::Instance();
0144   param->SetBuildCSDARange(true);
0145   param->SetMscStepLimitType(fUseSafety);
0146   param->RegionsMicroElec();
0147   // physicList ISS
0148   param->SetDefaults();
0149   param->SetMinEnergy(0.1*eV);
0150   param->SetMaxEnergy(10 * TeV);
0151   param->SetLowestElectronEnergy(0 * eV); //<--- Energy cut in the vacuum!!! =0eV to get right SEY
0152   param->SetNumberOfBinsPerDecade(20);
0153   param->ActivateAngularGeneratorForIonisation(true);
0154   param->SetAugerCascade(true);//*/
0155
0156   auto particleIterator=GetParticleIterator();
0157   particleIterator->reset();
0158
0159   while( (*particleIterator)() )
0160   {
0161
0162     G4ParticleDefinition* particle = particleIterator->value();
0163     G4ProcessManager* pmanager = particle->GetProcessManager();
0164     G4String particleName = particle->GetParticleName();
0165
0166     // *********************************
0167     // 1) Processes for the World region
0168     // *********************************
0169
0170     if (particleName == "e-") {
0171
0172       // STANDARD msc is active in the world
0173       G4eMultipleScattering* msc = new G4eMultipleScattering();
0174       msc->AddEmModel(1, new G4UrbanMscModel());
0175       pmanager->AddProcess(msc, -1, 1, -1);
0176
0177       // STANDARD ionisation is active in the world
0178       G4eIonisation* eion = new G4eIonisation();
0179       pmanager->AddProcess(eion, -1, 2, 2);
0180
0181       // MicroElec elastic is not active in the world
0182       G4MicroElecElastic* theMicroElecElasticProcess = new G4MicroElecElastic("e-_G4MicroElecElastic");
0183       theMicroElecElasticProcess->SetEmModel(new G4DummyModel(),1);
0184       pmanager->AddDiscreteProcess(theMicroElecElasticProcess);
0185
0186       // MicroElec ionisation is not active in the world
0187       G4MicroElecInelastic* microelecioni = new G4MicroElecInelastic("e-_G4Dielectrics");
0188       microelecioni->SetEmModel(new G4DummyModel(),1);
0189       pmanager->AddDiscreteProcess(microelecioni);
0190
0191       //Phonons for SiO2, AL2O3, BN
0192       G4MicroElecLOPhononScattering* opticalPhonon = new G4MicroElecLOPhononScattering("e-_G4LOPhononScattering");
0193       opticalPhonon->SetEmModel(new G4DummyModel(), 1);
0194       pmanager->AddDiscreteProcess(opticalPhonon);
0195
0196
0197       G4MicroElecSurface* MicroElecSurf = new G4MicroElecSurface("e-_G4MicroElecSurface");
0198       MicroElecSurf->SetProcessManager(pmanager);
0199       pmanager->AddDiscreteProcess(MicroElecSurf);//*/
0200
0201       // Modified for capture in Al2O3 and SiO2 (Polaronic trapping effect)
0202       G4MicroElecCapture* ecap = new G4MicroElecCapture("Target",0.9*eV);
0203       pmanager->AddDiscreteProcess(ecap);//*/
0204
0205     } else if ( particleName == "proton" ) {
0206
0207       // multiple scatering for protons
0208       G4hMultipleScattering* msc = new G4hMultipleScattering();
0209       pmanager->AddProcess(msc, -1, 1, 1);
0210
0211       // STANDARD ionisation is active in the world
0212       G4hIonisation* hion = new G4hIonisation();
0213       pmanager->AddProcess(hion, -1, 2, 2);
0214
0215     } else if(particleName == "alpha") {
0216
0217       // multiple scatering for protons
0218       G4hMultipleScattering* msc = new G4hMultipleScattering();
0219       pmanager->AddProcess(msc, -1, 1, 1);
0220
0221       // STANDARD ionisation is active in the world
0222       G4ionIonisation* hion = new G4ionIonisation();
0223       pmanager->AddProcess(hion, -1, 2, 2);
0224
0225     } else if (particleName == "GenericIon") {
0226
0227       // multiple scatering for protons
0228       G4hMultipleScattering* msc = new G4hMultipleScattering();
0229       pmanager->AddProcess(msc, -1, 1, 1);
0230
0231       // STANDARD ionisation is active in the world
0232       G4ionIonisation* hion = new G4ionIonisation();
0233       pmanager->AddProcess(hion, -1, 2, 2);
0234
0235     }
0236   }
0237
0238   // **************************************
0239   // 2) Define processes for Target region
0240   // **************************************
0241
0242   // STANDARD EM processes should be inactivated when corresponding MicroElec processes are used
0243   // - STANDARD EM e- processes are inactivated below 100 MeV
0244   // - STANDARD EM proton & ion processes are inactivated below standEnergyLimit
0245   //
0246   G4EmConfigurator* em_config = G4LossTableManager::Instance()->EmConfigurator();
0247
0248   G4VEmModel* mod;
0249
0250   // *** e- ----------------------------------------------------------
0251   // ---> STANDARD EM processes are inactivated below 100 MeV
0252   G4UrbanMscModel* msc =  new G4UrbanMscModel();
0253   msc->SetActivationLowEnergyLimit(100*MeV);
0254   em_config->SetExtraEmModel("e-","msc",msc,"Target");
0255
0256   mod = new G4MollerBhabhaModel();
0257   mod->SetActivationLowEnergyLimit(10*MeV);
0258   em_config->SetExtraEmModel("e-","eIoni",mod,"Target",0.0,10*TeV, new G4UniversalFluctuation());
0259
0260   // ---> MicroElec processes activated
0261   mod = new G4MicroElecElasticModel_new();
0262   em_config->SetExtraEmModel("e-","e-_G4MicroElecElastic",mod,"Target",0.1*eV,100*MeV);
0263
0264   mod = new G4MicroElecInelasticModel_new();
0265   em_config->SetExtraEmModel("e-","e-_G4Dielectrics",mod,"Target",0.1*eV,10*MeV);
0266
0267   //Phonons LO pour sio2,  al2o3 and BN
0268   mod = new G4MicroElecLOPhononModel();
0269   em_config->SetExtraEmModel("e-", "e-_G4LOPhononScattering", mod, "Target", 0.1 * eV, 10 * MeV);//*/
0270
0271   // *** proton ----------------------------------------------------------
0272   mod = new G4BetheBlochModel();
0273   mod->SetActivationLowEnergyLimit(10*MeV);
0274   em_config->SetExtraEmModel("proton","hIoni",mod,"Target",2*MeV,10*TeV, new G4IonFluctuations());
0275
0276   // ---> Dielectric processes activated
0277   mod = new G4MicroElecInelasticModel_new();
0278   mod->SetActivationLowEnergyLimit(100*eV);
0279   em_config->SetExtraEmModel("proton","p_G4Dielectrics",mod,"Target",100*eV,10*MeV);
0280
0281   // *** alpha ----------------------------------------------------------
0282   mod = new G4BetheBlochModel();
0283   mod->SetActivationLowEnergyLimit(10*MeV);
0284   em_config->SetExtraEmModel("alpha","ionIoni",mod,"Target",10*MeV,10*TeV, new G4IonFluctuations());
0285
0286   // *** ion ----------------------------------------------------------
0287   // ---> STANDARD EM processes inactivated below standEnergyLimit
0288
0289   mod = new G4BetheBlochModel();
0290   mod->SetActivationLowEnergyLimit(10*MeV);
0291   em_config->SetExtraEmModel("GenericIon","ionIoni",mod,"Target",10*MeV,10*TeV, new G4IonFluctuations());
0292
0293   // ---> Dielectric processes activated
0294   mod = new G4MicroElecInelasticModel_new();
0295   mod->SetActivationLowEnergyLimit(100*eV);
0296   em_config->SetExtraEmModel("GenericIon","ion_G4Dielectrics",mod,"Target",0.0,10*MeV);
0297
0298   // Deexcitation
0299   G4VAtomDeexcitation* de = new G4UAtomicDeexcitation();
0300   G4LossTableManager::Instance()->SetAtomDeexcitation(de);
0301   de->SetFluo(true);
0302   de->SetAuger(true);
0303   de->SetPIXE(true);
0304   de->InitialiseForNewRun();
0305
0306 }
0307
0308 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo....
0309
0310 void MicroElecPhysics::ConstructGeneral()
0311 { }
0312
0313 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo....
0314