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0005 Geant4 - Microelec-SEY example
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0007
0008 README file
0009 ----------------------
0010
0011 CORRESPONDING AUTHORS
0012
0013 C. Inguimbert*, Q. Gibaru*, P. Caron*, M. Raine** D. Lambert**,
0014 * ONERA, 2 avenue Edouard Belin - BP 74025 - 31055 TOULOUSE, France
0015 ** CEA, DAM, DIF, F-91297 Arpajon, France
0016 email: melanie.raine@cea.fr damien.lambert@cea.fr
0017 christophe.Inguimbert@onera.fr Quentin.Gibaru@onera.fr, Pablo.Caron@onera.fr
0018
0019 ---->0. INTRODUCTION.
0020
0021 The Microelec-SEY example simulates the passage of incident electrons [10eV, 10keV]
0022 in a stack of 6 layers that thicknesses and materail nature can be user defined
0023 The number of electrons re-emitted by the irradiated surface is counted by a spherical detector
0024 surounding the whole geometry and providing the SEY rate in a csv file as a function of the incident energy
0025
0026 ---->1. GEOMETRY SET-UP.
0027
0028 The geoemtry is made of a surface layer + 4 other layers + a substrate
0029 By default, the material is Si for all the layers, the World and the surrounding detector are made of vacuum
0030 The different layers are slabs. By default the substrate is a 1mm cube topped with 4 layers + the surface layers
0031 being slabs of same lateral dimensions and thicknesses of 100 nm.
0032 The ray of the spherical detector as well as the dimensions of the world are automatically defined
0033
0034 ---->2. SET-UP
0035
0036 Make sure that the G4EMLOW database version is correct (> or = 7.16)
0037
0038 The variable G4ANALYSIS_USE must be set to 1.
0039
0040 The code should be compiled with cmake:
0041 $ mkdir Microelec-SEY-build
0042 $ cd Microelec-SEY-build
0043 $ cmake -DGeant4_DIR=/your_path/geant4-install/ $PATHTOMICROELECEXAMPLE/Microelec-SEY
0044 $ make
0045
0046 It works in MT mode.
0047
0048 ---->3. HOW TO RUN THE EXAMPLE
0049
0050 In interactive mode, run:
0051
0052 ./Microelec-SEY
0053
0054 The macro Microelec-SEY.mac is executed by default.
0055
0056 To get visualization, make sure to uncomment the #/control/execute vis.mac or #/control/execute vis-win.mac
0057 line in the macro.
0058
0059 By default, the new MicroElec models are used.
0060
0061 You can change the type of the target material in the macrocommand file
0062 (G4_Ag G4_Al G4_C G4_Cu G4_Ge G4_KAPTON G4_Ni G4_Si G4_SILICON_DIOXIDE G4_Ti G4_W),
0063 by selecting the materal the user want to test
0064
0065
0066
0067 ---->4. PHYSICS
0068
0069 This example shows:
0070 - how to use the G4MicroElecPhysics processes,
0071 - how to affect them a name
0072 - how to combine them with Standard EM Physics.
0073 - and model the transport of electrons at low energy ([~eV, 10keV]
0074
0075 A simple electron capture process is also provided in order to kill electrons
0076 below a chosen energy threshold, set in the Physics list.
0077
0078 ---->5. SIMULATION OUTPUT AND RESULT ANALYZIS
0079
0080 The example is running by default for a set of incident energy defined in the .mac file and
0081 in the ###Energy Loop### setup section. The number of electron is defined in the
0082 loop_ekin.mac file (3000 electrons/incident energy by default)
0083
0084
0085 The output results consists in a SEY_nt_data.csv file, containing for the set of simulations
0086 - 1 column : the incident energy (in eV)
0087 - 2 column : Total emission yield (TEY without unit => number of counted electrons/incident number of electrons )
0088 - 3 column : Secondary emission yield (SEY without unit => number of counted secondary electrons/incident number of electrons )
0089 - 4 column : Backscattered emission yield (BEY without unit => number of counted incident electrons/incident number of electrons )
0090 - 5 column : Secondary emission yield of elecgtrons having an energy > 50 eV (SEY without unit => number of counted secondary electrons (E>50eV) /incident number of electrons )
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0093
0094 Should you have any enquiry, please do not hesitate to contact one the corresponding authors.
