include/Geant4/G4MicroElecSiStructure.hh

0001 //
0002 // ********************************************************************
0003 // * License and Disclaimer                                           *
0004 // *                                                                  *
0005 // * The  Geant4 software  is  copyright of the Copyright Holders  of *
0006 // * the Geant4 Collaboration.  It is provided  under  the terms  and *
0007 // * conditions of the Geant4 Software License,  included in the file *
0008 // * LICENSE and available at  http://cern.ch/geant4/license .  These *
0009 // * include a list of copyright holders.                             *
0010 // *                                                                  *
0011 // * Neither the authors of this software system, nor their employing *
0012 // * institutes,nor the agencies providing financial support for this *
0013 // * work  make  any representation or  warranty, express or implied, *
0014 // * regarding  this  software system or assume any liability for its *
0015 // * use.  Please see the license in the file  LICENSE  and URL above *
0016 // * for the full disclaimer and the limitation of liability.         *
0017 // *                                                                  *
0018 // * This  code  implementation is the result of  the  scientific and *
0019 // * technical work of the GEANT4 collaboration.                      *
0020 // * By using,  copying,  modifying or  distributing the software (or *
0021 // * any work based  on the software)  you  agree  to acknowledge its *
0022 // * use  in  resulting  scientific  publications,  and indicate your *
0023 // * acceptance of all terms of the Geant4 Software license.          *
0024 // ********************************************************************
0025
0026 // G4MicroElecSiStructure.hh, 2011/08/29 A.Valentin, M. Raine
0027 //
0028 // Based on the following publications
0029 //
0030 //          - Inelastic cross-sections of low energy electrons in silicon
0031 //      for the simulation of heavy ion tracks with theGeant4-DNA toolkit,
0032 //      NSS Conf. Record 2010, pp. 80-85
0033 //      - Geant4 physics processes for microdosimetry simulation:
0034 //      very low energy electromagnetic models for electrons in Si,
0035 //      NIM B, vol. 288, pp. 66-73, 2012.
0036 //      - Geant4 physics processes for microdosimetry simulation:
0037 //      very low energy electromagnetic models for protons and
0038 //      heavy ions in Si, NIM B, vol. 287, pp. 124-129, 2012.
0039
0040 #ifndef G4MICROELECSISTRUCTURE_HH
0041 #define G4MICROELECSISTRUCTURE_HH 1
0042
0043 #include "globals.hh"
0044
0045 #include <vector>
0046
0047 class G4MicroElecSiStructure
0048 {
0049  public:
0050   G4MicroElecSiStructure();
0051
0052   virtual ~G4MicroElecSiStructure() = default;
0053
0054   G4double Energy(G4int level);
0055
0056   G4int NumberOfLevels() { return nLevels; }
0057
0058  private:
0059   G4int nLevels{6};  // Number of levels of silicon
0060
0061   std::vector<G4double> energyConstant;
0062 };
0063
0064 #endif