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0001 //
0002 // ********************************************************************
0003 // * License and Disclaimer                                           *
0004 // *                                                                  *
0005 // * The  Geant4 software  is  copyright of the Copyright Holders  of *
0006 // * the Geant4 Collaboration.  It is provided  under  the terms  and *
0007 // * conditions of the Geant4 Software License,  included in the file *
0008 // * LICENSE and available at  http://cern.ch/geant4/license .  These *
0009 // * include a list of copyright holders.                             *
0010 // *                                                                  *
0011 // * Neither the authors of this software system, nor their employing *
0012 // * institutes,nor the agencies providing financial support for this *
0013 // * work  make  any representation or  warranty, express or implied, *
0014 // * regarding  this  software system or assume any liability for its *
0015 // * use.  Please see the license in the file  LICENSE  and URL above *
0016 // * for the full disclaimer and the limitation of liability.         *
0017 // *                                                                  *
0018 // * This  code  implementation is the result of  the  scientific and *
0019 // * technical work of the GEANT4 collaboration.                      *
0020 // * By using,  copying,  modifying or  distributing the software (or *
0021 // * any work based  on the software)  you  agree  to acknowledge its *
0022 // * use  in  resulting  scientific  publications,  and indicate your *
0023 // * acceptance of all terms of the Geant4 Software license.          *
0024 // ********************************************************************
0025 //
0026 //
0027 // G4MicroElecMaterialStructure.hh, 2011/08/29 A.Valentin, M. Raine are with CEA [a]
0028 //                              2020/05/20 P. Caron, C. Inguimbert are with ONERA [b] 
0029 //                         Q. Gibaru is with CEA [a], ONERA [b] and CNES [c]
0030 //                         M. Raine and D. Lambert are with CEA [a]
0031 //
0032 // A part of this work has been funded by the French space agency(CNES[c])
0033 // [a] CEA, DAM, DIF - 91297 ARPAJON, France
0034 // [b] ONERA - DPHY, 2 avenue E.Belin, 31055 Toulouse, France
0035 // [c] CNES, 18 av.E.Belin, 31401 Toulouse CEDEX, France
0036 //
0037 // Based on the following publications
0038 //  - A.Valentin, M. Raine, 
0039 //      Inelastic cross-sections of low energy electrons in silicon
0040 //        for the simulation of heavy ion tracks with the Geant4-DNA toolkit,
0041 //        NSS Conf. Record 2010, pp. 80-85
0042 //             https://doi.org/10.1109/NSSMIC.2010.5873720
0043 //
0044 //      - A.Valentin, M. Raine, M.Gaillardin, P.Paillet
0045 //        Geant4 physics processes for microdosimetry simulation:
0046 //        very low energy electromagnetic models for electrons in Silicon,
0047 //             https://doi.org/10.1016/j.nimb.2012.06.007
0048 //        NIM B, vol. 288, pp. 66-73, 2012, part A
0049 //        heavy ions in Si, NIM B, vol. 287, pp. 124-129, 2012, part B
0050 //             https://doi.org/10.1016/j.nimb.2012.07.028
0051 //
0052 //  - M. Raine, M. Gaillardin, P. Paillet
0053 //        Geant4 physics processes for silicon microdosimetry simulation: 
0054 //        Improvements and extension of the energy-range validity up to 10 GeV/nucleon
0055 //        NIM B, vol. 325, pp. 97-100, 2014
0056 //             https://doi.org/10.1016/j.nimb.2014.01.014
0057 //
0058 //      - J. Pierron, C. Inguimbert, M. Belhaj, T. Gineste, J. Puech, M. Raine
0059 //        Electron emission yield for low energy electrons: 
0060 //        Monte Carlo simulation and experimental comparison for Al, Ag, and Si
0061 //        Journal of Applied Physics 121 (2017) 215107. 
0062 //               https://doi.org/10.1063/1.4984761
0063 //
0064 //      - P. Caron,
0065 //        Study of Electron-Induced Single-Event Upset in Integrated Memory Devices
0066 //        PHD, 16th October 2019
0067 //
0068 //  - Q.Gibaru, C.Inguimbert, P.Caron, M.Raine, D.Lambert, J.Puech, 
0069 //        Geant4 physics processes for microdosimetry and secondary electron emission simulation : 
0070 //        Extension of MicroElec to very low energies and new materials
0071 //        NIM B, 2020, in review.
0072 //
0073 //
0074 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo...... 
0075 
0076 #ifndef G4MICROELECMATERIALSTRUCTURE_HH 
0077 #define G4MICROELECMATERIALSTRUCTURE_HH 1 
0078 
0079 #include "globals.hh" 
0080 #include "G4Material.hh"
0081 #include <vector>
0082 
0083 class G4MicroElecMaterialStructure
0084 {
0085 public:
0086   G4MicroElecMaterialStructure(const G4String& matName = "");
0087   virtual ~G4MicroElecMaterialStructure() = default;
0088     
0089   void ReadMaterialFile();
0090   G4double Energy(G4int level);
0091   G4int NumberOfLevels() { return nLevels; }
0092   G4double GetZ(G4int Shell);
0093   G4double ConvertUnit(const G4String& unitName);
0094   G4double GetEnergyGap() { return energyGap; }
0095   G4double GetInitialEnergy() { return initialEnergy; }
0096   G4int GetEADL_Enumerator(G4int shell) { return EADL_Enumerator[shell]; };
0097   G4double GetWorkFunction() { return workFunction; };
0098   G4String GetMaterialName() { return materialName; };
0099   G4double GetLimitEnergy(G4int level);
0100   G4double GetElasticModelLowLimit() {return flimitElastic[0];}
0101   G4double GetElasticModelHighLimit() { return flimitElastic[1]; }
0102   G4double GetInelasticModelLowLimit(G4int pdg);
0103   G4double GetInelasticModelHighLimit(G4int pdg);
0104   G4bool IsShellWeaklyBound(G4int level);
0105   
0106 private:
0107   // private elements     
0108   G4int nLevels = 3;    // Number of levels of material
0109   G4bool isCompound = false;
0110   G4String materialName = "";
0111   std::vector<G4bool> isShellWeaklyBoundVector;
0112   std::vector<G4double> energyConstant;
0113   std::vector<G4double> LimitEnergy;
0114   std::vector<G4int> EADL_Enumerator;
0115   G4double workFunction = 0.0;
0116   G4double initialEnergy = 0.0;
0117   std::vector<G4double> compoundShellZ;
0118   G4double Z = 0.0;
0119   G4double energyGap = 0.0;
0120   G4double flimitElastic[2] = { 0,0 };
0121   G4double flimitInelastic[4] = { 0,0,0,0 };
0122 };
0123 
0124 #endif