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0001 // 0002 // ******************************************************************** 0003 // * License and Disclaimer * 0004 // * * 0005 // * The Geant4 software is copyright of the Copyright Holders of * 0006 // * the Geant4 Collaboration. It is provided under the terms and * 0007 // * conditions of the Geant4 Software License, included in the file * 0008 // * LICENSE and available at http://cern.ch/geant4/license . These * 0009 // * include a list of copyright holders. * 0010 // * * 0011 // * Neither the authors of this software system, nor their employing * 0012 // * institutes,nor the agencies providing financial support for this * 0013 // * work make any representation or warranty, express or implied, * 0014 // * regarding this software system or assume any liability for its * 0015 // * use. Please see the license in the file LICENSE and URL above * 0016 // * for the full disclaimer and the limitation of liability. * 0017 // * * 0018 // * This code implementation is the result of the scientific and * 0019 // * technical work of the GEANT4 collaboration. * 0020 // * By using, copying, modifying or distributing the software (or * 0021 // * any work based on the software) you agree to acknowledge its * 0022 // * use in resulting scientific publications, and indicate your * 0023 // * acceptance of all terms of the Geant4 Software license. * 0024 // ******************************************************************** 0025 // 0026 // 0027 // G4MicroElecMaterialStructure.hh, 2011/08/29 A.Valentin, M. Raine are with CEA [a] 0028 // 2020/05/20 P. Caron, C. Inguimbert are with ONERA [b] 0029 // Q. Gibaru is with CEA [a], ONERA [b] and CNES [c] 0030 // M. Raine and D. Lambert are with CEA [a] 0031 // 0032 // A part of this work has been funded by the French space agency(CNES[c]) 0033 // [a] CEA, DAM, DIF - 91297 ARPAJON, France 0034 // [b] ONERA - DPHY, 2 avenue E.Belin, 31055 Toulouse, France 0035 // [c] CNES, 18 av.E.Belin, 31401 Toulouse CEDEX, France 0036 // 0037 // Based on the following publications 0038 // - A.Valentin, M. Raine, 0039 // Inelastic cross-sections of low energy electrons in silicon 0040 // for the simulation of heavy ion tracks with the Geant4-DNA toolkit, 0041 // NSS Conf. Record 2010, pp. 80-85 0042 // https://doi.org/10.1109/NSSMIC.2010.5873720 0043 // 0044 // - A.Valentin, M. Raine, M.Gaillardin, P.Paillet 0045 // Geant4 physics processes for microdosimetry simulation: 0046 // very low energy electromagnetic models for electrons in Silicon, 0047 // https://doi.org/10.1016/j.nimb.2012.06.007 0048 // NIM B, vol. 288, pp. 66-73, 2012, part A 0049 // heavy ions in Si, NIM B, vol. 287, pp. 124-129, 2012, part B 0050 // https://doi.org/10.1016/j.nimb.2012.07.028 0051 // 0052 // - M. Raine, M. Gaillardin, P. Paillet 0053 // Geant4 physics processes for silicon microdosimetry simulation: 0054 // Improvements and extension of the energy-range validity up to 10 GeV/nucleon 0055 // NIM B, vol. 325, pp. 97-100, 2014 0056 // https://doi.org/10.1016/j.nimb.2014.01.014 0057 // 0058 // - J. Pierron, C. Inguimbert, M. Belhaj, T. Gineste, J. Puech, M. Raine 0059 // Electron emission yield for low energy electrons: 0060 // Monte Carlo simulation and experimental comparison for Al, Ag, and Si 0061 // Journal of Applied Physics 121 (2017) 215107. 0062 // https://doi.org/10.1063/1.4984761 0063 // 0064 // - P. Caron, 0065 // Study of Electron-Induced Single-Event Upset in Integrated Memory Devices 0066 // PHD, 16th October 2019 0067 // 0068 // - Q.Gibaru, C.Inguimbert, P.Caron, M.Raine, D.Lambert, J.Puech, 0069 // Geant4 physics processes for microdosimetry and secondary electron emission simulation : 0070 // Extension of MicroElec to very low energies and new materials 0071 // NIM B, 2020, in review. 0072 // 0073 // 0074 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo...... 0075 0076 #ifndef G4MICROELECMATERIALSTRUCTURE_HH 0077 #define G4MICROELECMATERIALSTRUCTURE_HH 1 0078 0079 #include "globals.hh" 0080 #include "G4Material.hh" 0081 #include <vector> 0082 0083 class G4MicroElecMaterialStructure 0084 { 0085 public: 0086 G4MicroElecMaterialStructure(const G4String& matName = ""); 0087 virtual ~G4MicroElecMaterialStructure() = default; 0088 0089 void ReadMaterialFile(); 0090 G4double Energy(G4int level); 0091 G4int NumberOfLevels() { return nLevels; } 0092 G4double GetZ(G4int Shell); 0093 G4double ConvertUnit(const G4String& unitName); 0094 G4double GetEnergyGap() { return energyGap; } 0095 G4double GetInitialEnergy() { return initialEnergy; } 0096 G4int GetEADL_Enumerator(G4int shell) { return EADL_Enumerator[shell]; }; 0097 G4double GetWorkFunction() { return workFunction; }; 0098 G4String GetMaterialName() { return materialName; }; 0099 G4double GetLimitEnergy(G4int level); 0100 G4double GetElasticModelLowLimit() {return flimitElastic[0];} 0101 G4double GetElasticModelHighLimit() { return flimitElastic[1]; } 0102 G4double GetInelasticModelLowLimit(G4int pdg); 0103 G4double GetInelasticModelHighLimit(G4int pdg); 0104 G4bool IsShellWeaklyBound(G4int level); 0105 0106 private: 0107 // private elements 0108 G4int nLevels = 3; // Number of levels of material 0109 G4bool isCompound = false; 0110 G4String materialName = ""; 0111 std::vector<G4bool> isShellWeaklyBoundVector; 0112 std::vector<G4double> energyConstant; 0113 std::vector<G4double> LimitEnergy; 0114 std::vector<G4int> EADL_Enumerator; 0115 G4double workFunction = 0.0; 0116 G4double initialEnergy = 0.0; 0117 std::vector<G4double> compoundShellZ; 0118 G4double Z = 0.0; 0119 G4double energyGap = 0.0; 0120 G4double flimitElastic[2] = { 0,0 }; 0121 G4double flimitInelastic[4] = { 0,0,0,0 }; 0122 }; 0123 0124 #endif
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