include/Geant4/G4MicroElecElasticModel_new.hh

0001 //
0002 // ********************************************************************
0003 // * License and Disclaimer                                           *
0004 // *                                                                  *
0005 // * The  Geant4 software  is  copyright of the Copyright Holders  of *
0006 // * the Geant4 Collaboration.  It is provided  under  the terms  and *
0007 // * conditions of the Geant4 Software License,  included in the file *
0008 // * LICENSE and available at  http://cern.ch/geant4/license .  These *
0009 // * include a list of copyright holders.                             *
0010 // *                                                                  *
0011 // * Neither the authors of this software system, nor their employing *
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0013 // * work  make  any representation or  warranty, express or implied, *
0014 // * regarding  this  software system or assume any liability for its *
0015 // * use.  Please see the license in the file  LICENSE  and URL above *
0016 // * for the full disclaimer and the limitation of liability.         *
0017 // *                                                                  *
0018 // * This  code  implementation is the result of  the  scientific and *
0019 // * technical work of the GEANT4 collaboration.                      *
0020 // * By using,  copying,  modifying or  distributing the software (or *
0021 // * any work based  on the software)  you  agree  to acknowledge its *
0022 // * use  in  resulting  scientific  publications,  and indicate your *
0023 // * acceptance of all terms of the Geant4 Software license.          *
0024 // ********************************************************************
0025 //
0026 //
0027 // G4MicroElecElasticModel_new.hh, 2011/08/29 A.Valentin, M. Raine are with CEA [a]
0028 //                              2020/05/20 P. Caron, C. Inguimbert are with ONERA [b]
0029 //                         Q. Gibaru is with CEA [a], ONERA [b] and CNES [c]
0030 //                         M. Raine and D. Lambert are with CEA [a]
0031 //
0032 // A part of this work has been funded by the French space agency(CNES[c])
0033 // [a] CEA, DAM, DIF - 91297 ARPAJON, France
0034 // [b] ONERA - DPHY, 2 avenue E.Belin, 31055 Toulouse, France
0035 // [c] CNES, 18 av.E.Belin, 31401 Toulouse CEDEX, France
0036 //
0037 // Based on the following publications
0038 //  - A.Valentin, M. Raine,
0039 //      Inelastic cross-sections of low energy electrons in silicon
0040 //        for the simulation of heavy ion tracks with the Geant4-DNA toolkit,
0041 //        NSS Conf. Record 2010, pp. 80-85
0042 //             https://doi.org/10.1109/NSSMIC.2010.5873720
0043 //
0044 //      - A.Valentin, M. Raine, M.Gaillardin, P.Paillet
0045 //        Geant4 physics processes for microdosimetry simulation:
0046 //        very low energy electromagnetic models for electrons in Silicon,
0047 //             https://doi.org/10.1016/j.nimb.2012.06.007
0048 //        NIM B, vol. 288, pp. 66-73, 2012, part A
0049 //        heavy ions in Si, NIM B, vol. 287, pp. 124-129, 2012, part B
0050 //             https://doi.org/10.1016/j.nimb.2012.07.028
0051 //
0052 //  - M. Raine, M. Gaillardin, P. Paillet
0053 //        Geant4 physics processes for silicon microdosimetry simulation:
0054 //        Improvements and extension of the energy-range validity up to 10 GeV/nucleon
0055 //        NIM B, vol. 325, pp. 97-100, 2014
0056 //             https://doi.org/10.1016/j.nimb.2014.01.014
0057 //
0058 //      - J. Pierron, C. Inguimbert, M. Belhaj, T. Gineste, J. Puech, M. Raine
0059 //        Electron emission yield for low energy electrons:
0060 //        Monte Carlo simulation and experimental comparison for Al, Ag, and Si
0061 //        Journal of Applied Physics 121 (2017) 215107.
0062 //               https://doi.org/10.1063/1.4984761
0063 //
0064 //      - P. Caron,
0065 //        Study of Electron-Induced Single-Event Upset in Integrated Memory Devices
0066 //        PHD, 16th October 2019
0067 //
0068 //  - Q.Gibaru, C.Inguimbert, P.Caron, M.Raine, D.Lambert, J.Puech,
0069 //        Geant4 physics processes for microdosimetry and secondary electron emission simulation :
0070 //        Extension of MicroElec to very low energies and new materials
0071 //        NIM B, 2020, in review.
0072 //
0073 //
0074 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo......
0075
0076 #ifndef G4MICROELECELASTICMODEL_NEW_HH
0077 #define G4MICROELECELASTICMODEL_NEW_HH 1
0078
0079 #include <map>
0080 #include <CLHEP/Units/SystemOfUnits.h>
0081 #include "G4MicroElecMaterialStructure.hh"
0082 #include "G4MicroElecCrossSectionDataSet_new.hh"
0083 #include "G4VEmModel.hh"
0084 #include "G4Electron.hh"
0085 #include "G4ParticleChangeForGamma.hh"
0086 #include "G4LogLogInterpolation.hh"
0087 #include "G4ProductionCutsTable.hh"
0088 #include "G4NistManager.hh"
0089
0090 class G4MicroElecElasticModel_new : public G4VEmModel
0091 {
0092
0093 public:
0094   G4MicroElecElasticModel_new(const G4ParticleDefinition* p = 0,
0095                   const G4String& nam = "MicroElecElasticModel");
0096   ~G4MicroElecElasticModel_new() override;
0097
0098   void Initialise(const G4ParticleDefinition*, const G4DataVector&) override;
0099
0100   G4double CrossSectionPerVolume(const G4Material* material,
0101                  const G4ParticleDefinition* p,
0102                  G4double ekin,
0103                  G4double emin,
0104                  G4double emax) override;
0105
0106   G4double AcousticCrossSectionPerVolume(G4double ekin, G4double kbz, G4double rho,
0107                      G4double cs, G4double Aac, G4double Eac,
0108                      G4double prefactor);
0109
0110   void SampleSecondaries(std::vector<G4DynamicParticle*>*,
0111              const G4MaterialCutsCouple*,
0112              const G4DynamicParticle*,
0113              G4double tmin,
0114              G4double maxEnergy) override;
0115
0116   void SetKillBelowThreshold (G4double threshold);
0117
0118   G4double GetKillBelowThreshold () { return killBelowEnergy; }
0119
0120   G4double DamageEnergy(G4double T,G4double A, G4double Z);
0121
0122 protected:
0123   G4ParticleChangeForGamma* fParticleChangeForGamma;
0124
0125 private:
0126
0127   G4MicroElecElasticModel_new & operator=(const  G4MicroElecElasticModel_new &right);
0128   G4MicroElecElasticModel_new(const  G4MicroElecElasticModel_new&);
0129
0130   // Final state
0131   G4double Theta(G4ParticleDefinition * aParticleDefinition, G4double k, G4double integrDiff);
0132   G4double LinLinInterpolate(G4double e1, G4double e2, G4double e, G4double xs1, G4double xs2);
0133   G4double LogLogInterpolate(G4double e1, G4double e2, G4double e, G4double xs1, G4double xs2);
0134   G4double LinLogInterpolate(G4double e1, G4double e2, G4double e, G4double xs1, G4double xs2);
0135   G4double QuadInterpolator(G4double e11, G4double e12, G4double e21, G4double e22,
0136                 G4double x11, G4double x12, G4double x21, G4double x22,
0137                 G4double t1, G4double t2, G4double t, G4double e);
0138
0139   G4double RandomizeCosTheta(G4double k);
0140
0141   G4Material* nistSi = nullptr;
0142   G4double killBelowEnergy;
0143   G4double lowEnergyLimit;
0144   G4double lowEnergyLimitOfModel;
0145   G4double highEnergyLimit;
0146   G4bool isInitialised;
0147   G4int verboseLevel;
0148   // Cross section
0149   typedef std::map<G4String,G4String,std::less<G4String> > MapFile;
0150   MapFile tableFile;
0151   typedef std::map<G4String,G4MicroElecCrossSectionDataSet_new*,std::less<G4String> > MapData;
0152   //MapData tableData;
0153
0154   typedef std::map<G4String, MapData*, std::less<G4String> > TCSMap;
0155   TCSMap tableTCS;
0156
0157   //Maps for multilayers
0158   typedef std::map<G4double, std::map<G4double, G4double> > TriDimensionMap;
0159
0160   typedef std::map<G4String, TriDimensionMap* > ThetaMap;
0161   ThetaMap thetaDataStorage; //Storage of angles (cumulated)
0162
0163   typedef std::map<G4String, std::vector<G4double>* > energyMap;
0164   energyMap eIncidentEnergyStorage;
0165
0166   typedef std::map<G4double, std::vector<G4double> > VecMap;
0167
0168   typedef std::map<G4String, VecMap* > ProbaMap;
0169   ProbaMap eProbaStorage; //Storage of probabilities for cumulated sections
0170
0171   typedef std::map<G4String, G4MicroElecMaterialStructure*, std::less<G4String> > MapStructure;
0172
0173   MapStructure tableMaterialsStructures; //Structures of all materials simulated
0174
0175   G4MicroElecMaterialStructure* currentMaterialStructure = nullptr;
0176   typedef std::map<G4String, G4double, std::less<G4String> > MapEnergy;
0177   MapEnergy lowEnergyLimitTable;
0178   MapEnergy highEnergyLimitTable;
0179   MapEnergy workFunctionTable;
0180
0181   G4bool killElectron, acousticModelEnabled;
0182   G4String currentMaterialName;
0183   G4bool isOkToBeInitialised;
0184
0185 };
0186
0187 //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo....
0188
0189 #endif