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0005 Geant4 - Microelectronics example
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0007
0008 README file
0009 ----------------------
0010
0011 CORRESPONDING AUTHORS
0012
0013 M. Raine*, D. Lambert*, C. Inguimbert', Q. Gibaru'
0014 * CEA, DAM, DIF, F-91297 Arpajon, France
0015 ' ONERA, 2 avenue Edouard Belin - BP 74025 - 31055 TOULOUSE, France
0016 email: melanie.raine@cea.fr damien.lambert@cea.fr
0017 christophe.Inguimbert@onera.fr Quentin.Gibaru@onera.fr
0018
0019 ---->0. INTRODUCTION.
0020
0021 The microelectronics example simulates the track of a 5 MeV proton in silicon.
0022 Geant4 standard EM models are used in the World volume while Geant4-MicroElec models
0023 are used in a Target volume, declared as a Region.
0024
0025 ---->1. GEOMETRY SET-UP.
0026
0027 By default, the geometry is a 2 um side cube (World) made of silicon containing
0028 a smaller cubic Target volume of silicon (1 um3).
0029 The target material can be modified and simulated with G4MicroElecPhysics processes.
0030
0031 ---->2. SET-UP
0032
0033 Make sure that the G4EMLOW database version is correct (> or = 7.16)
0034
0035 The variable G4ANALYSIS_USE must be set to 1.
0036
0037 The code should be compiled with cmake:
0038 $ mkdir microelectronics-build
0039 $ cd microelectronics-build
0040 $ cmake -DGeant4_DIR=/your_path/geant4-install/ $PATHTOMICROELECEXAMPLE/microelectronics
0041 $ make
0042
0043 It works in MT mode (but in this example today MT=1 due to memory consumption of new Microelec models).
0044
0045 ---->3. HOW TO RUN THE EXAMPLE
0046
0047 In interactive mode, run:
0048
0049 ./microelectronics
0050
0051 The macro microelectronics.mac is executed by default.
0052
0053 To get visualization, make sure to uncomment the #/control/execute vis.mac
0054 line in the macro.
0055
0056 By default, the new MicroElec models are used.
0057 You can used the Silicon MicroElec models, with the "-onlySi" option:
0058 ./microelectronics -onlySi
0059 or
0060 ./microelectronics microelectronics.mac -onlySi
0061
0062 You can change the type of the target material
0063 (G4_Ag G4_Al G4_C G4_Cu G4_Ge G4_KAPTON G4_Ni G4_Si G4_SILICON_DIOXIDE G4_Ti G4_W),
0064 if you uncomment one line (/microelectronics/det/setMat) into the .mac file.
0065
0066
0067
0068 ---->4. PHYSICS
0069
0070 This example shows:
0071 - how to use the G4MicroElecPhysics and G4MicroElecSiPhysics processes,
0072 - how to affect them a name
0073 - how to combine them with Standard EM Physics.
0074
0075 A simple electron capture process is also provided in order to kill electrons
0076 below a chosen energy threshold, set in the Physics list.
0077
0078 Look at the G4MicroElecSiPhysics.cc (previous silicon MicroElec models)
0079 and G4MicroElecPhysics.cc (new MicroElec models) files.
0080
0081 ---->5. SIMULATION OUTPUT AND RESULT ANALYZIS
0082
0083 The output results consists in a microelectronics.root file, containing for each simulation step:
0084 - the type of particle for the current step
0085 - the type of process for the current step
0086 - the track position of the current step (in nanometers)
0087 - the energy deposit along the current step (in eV)
0088 - the step length (in nm)
0089 - the total enery loss along the current step (in eV)
0090
0091 This file can be easily analyzed using for example the provided ROOT macro
0092 file plot.C; to do so :
0093 * be sure to have ROOT installed on your machine
0094 * be sure to be in the microelectronics directory
0095 * launch ROOT by typing root
0096 * under your ROOT session, type in : .X plot.C to execute the macro file
0097 * alternatively you can type directly under your session : root plot.C
0098
0099 The naming scheme on the displayed ROOT plots is as follows (see SteppingAction.cc):
0100
0101 -particles:
0102 e- : 1
0103 proton : 2
0104 ion : 3
0105
0106 -processes:
0107 e-_G4MicroElecElastic 11
0108 e-_G4MicroElecInelastic 12
0109 eCapture 13
0110
0111 p_G4MicroElecInelastic 14
0112
0113 ion_G4MicroElecInelastic 15
0114
0115 hIoni 16
0116 eIoni 17
0117
0118 G4MicroElecPhysics parameters:
0119 e-_G4LOPhononScattering 19
0120 e-_G4MicroElecSurface 20
0121 alpha_G4Dielectrics 21
0122 ion_G4Dielectrics 22
0123
0124
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0126
0127 Should you have any enquiry, please do not hesitate to contact one the corresponding authors.
